Surfactant role of (TM)Sb in MOVPE growth of metamorphic InGaAs graded buffers
We present a virtual substrate for high quality InAs epitaxial layer, obtained via metalorganic vapor-phase epitaxy growth of Sb-assisted InxGa1-xAs metamorphic buffers, following a convex compositional continuous gradient of the In content from x = 53 % to 100 %. The use of Trimethylantimony (or its decomposition products) as a surfactant was
Gocalinska, A. et al.
Fecha de publicación:
12
2013