A Novel Design and Optimization Approach for Low Noise Amplifiers (LNA) Based on MOST Scattering Parameters and the gm/ID Ratio

Juan L. Castagnola; Fortunato C. Dualibe; Agustín M. Laprovitta; Hugo García-Vázquez
Referencia bibliográfica

Electronics 2020, 9(5), 785

Fecha de publicación:
5
2020
Número de autores
4
Número de autores del IAC
1
Número de citas referidas
0
Descripción
This work presents a new design methodology for radio frequency (RF) integrated circuits based on a unified analysis of the scattering parameters of the circuit and the gm/ID ratio of the involved transistors. Since the scattering parameters of the circuits are parameterized by means of the physical characteristics of transistors, designers can optimize transistor size and biasing to comply with the circuit specifications given in terms of S-parameters. A complete design of a cascode low noise amplifier (LNA) in MOS 65 nm technology is taken as a case study in order to validate the approach. In addition, this methodology permits the identification of the best trade-off between the minimum noise figure and the maximum gain for the LNA in a very simple way.