Bibcode
Lee, Ko-Hsin; Thomas, Kevin; Gocalinska, Agnieszka; Manganaro, M.; Yang, Hua; Pelucchi, Emanuele; Peters, Frank H.; Corbett, Brian
Referencia bibliográfica
Proceedings of the SPIE, Volume 8431, id. 84311Z (2012).
Advertised on:
6
2012
Número de citas
0
Número de citas referidas
0
Descripción
In this paper, the composition profiles within intermixed AlInGaAs-based
multiple quantum wells structure are analyzed by secondary ion mass
spectrometry and the bandgap blue shift is found to be mainly attributed
to the interdiffusion of In and Ga between the quantum wells and
barriers. Based on these results, AlInGaAs-based single quantum well
structures with various compressive strain (CS) levels are then
investigated and we report an enhancement of the bandgap shift by
increasing the compressive strain level in the SQW. For instance, at an
annealing temperature of 850°C, the photoluminescence blue shift can
reach more than 110 nm for the sample with 1.2%-CS SQW, but only 35 nm
with 0.4%-CS SQW. The indium composition ratios are designed to be 0.59
and 0.71 for the 0.4% and 1.2%-CS quantum wells, respectively, as
opposed to 0.53 for the lattice-matched barrier. This relatively larger
atomic compositional gradient between the CS quantum well and barrier is
expected to facilitate the atomic interdiffusion and lead to the more
pronounced bandgap shift.